GaInNAs p-i-n photodetectors with multiquantum wells structure

被引：0

作者：

Chen, Yung-Feng ^{[1
]}

Chen, Wei-Cheng ^{[1
]}

Chuang, Ricky W. ^{[1
]}

Su, Yan-Kuin ^{[1
]}

Tsai, Huo-Lieh ^{[2
]}

机构：

[1] Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

[2] Advanced Device Technology Department, Taiwan Semiconductor Manufacturing Co., Ltd., Tainan 741, Taiwan

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期

关键词：

GaInNAs/GaAs p-i-n photodetectors with 3 and 15 periods multiquantum wells (MQW) as the i-layer have been grown by metal-organic vapor-phase epitaxy (MOVPE). The cutoff wavelength of spectral responsivity occurs at around 1150nm and reflects the transition energy of the GaInNAs/GaAs MQW. Because of to the good crystal quality that the devices with three periods MQW have; a two orders of magnitude increase in the responsivity rejection ratio is realized between 1150 and 1250 nm at a reverse bias of 2.0 V. The junction breakdown voltage is obtained at a reverse bias of 18.4 V. The ideality factor indicates that the conduction mechanism is dominated by the diffusion process; and the defect scattering effect caused by the misfit dislocations is only slight. On the other hand; the device with 15 periods MQW induces a higher value of misfit dislocations; and shows a partial relaxation phenomenon and thus it shows relatively poor characteristics. © 2008 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

页码：2982 / 2986

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