GaInNAs p-i-n photodetectors with multiquantum wells structure

被引：0

作者：

Chen, Yung-Feng ^{[1
]}

Chen, Wei-Cheng ^{[1
]}

Chuang, Ricky W. ^{[1
]}

Su, Yan-Kuin ^{[1
]}

Tsai, Huo-Lieh ^{[2
]}

机构：

[1] Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

[2] Advanced Device Technology Department, Taiwan Semiconductor Manufacturing Co., Ltd., Tainan 741, Taiwan

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期

关键词：

GaInNAs/GaAs p-i-n photodetectors with 3 and 15 periods multiquantum wells (MQW) as the i-layer have been grown by metal-organic vapor-phase epitaxy (MOVPE). The cutoff wavelength of spectral responsivity occurs at around 1150nm and reflects the transition energy of the GaInNAs/GaAs MQW. Because of to the good crystal quality that the devices with three periods MQW have; a two orders of magnitude increase in the responsivity rejection ratio is realized between 1150 and 1250 nm at a reverse bias of 2.0 V. The junction breakdown voltage is obtained at a reverse bias of 18.4 V. The ideality factor indicates that the conduction mechanism is dominated by the diffusion process; and the defect scattering effect caused by the misfit dislocations is only slight. On the other hand; the device with 15 periods MQW induces a higher value of misfit dislocations; and shows a partial relaxation phenomenon and thus it shows relatively poor characteristics. © 2008 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2982 / 2986

共 50 条

[1] GaInNAs p-i-n photodetectors with multiquantum wells structure
Chen, Yung-Feng
Chen, Wei-Cheng
Chuang, Ricky W.
Su, Yan-Kuin
Tsai, Huo-Lieh
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2982 - 2986
[2] Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors
Pucicki, D.
MATERIALS SCIENCE-POLAND, 2017, 35 (04): : 893 - 902
[3] NONLINEARITY OF P-I-N PHOTODETECTORS
HAYES, RR
PERSECHINI, DL
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (01) : 70 - 72
[4] Ultraviolet photodetectors based on GaN with p-i-n structure
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
Bandaoti Guangdian, 2007, 1 (33-35):
[5] Noises of p-i-n UV photodetectors
Gasparyan, Ferdinand V.
Korman, Can E.
Melkonyan, Slavik V.
NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
[6] Nonlinearities in p-i-n microwave photodetectors
Williams, KJ
Esman, RD
Dagenais, M
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (01) : 84 - 96
[7] Investigation of MQW GaInNAs/GaAs p-i-n photodetector
Khalil, Hagir M.
Balkan, N.
Mazzucato, S.
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 159 - 162
[8] Nonlinearities in GaInAs/InP p-i-n photodetectors
Wu, TX
VanderVorst, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1996, 13 (05) : 297 - 300
[9] SPEED AND EFFICIENCY IN MULTIPLE P-I-N PHOTODETECTORS
SADRA, K
SRINIVASAN, A
NEIKIRK, DP
STREETMAN, BG
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1993, 11 (12) : 2052 - 2056
[10] Nonlinearities in GaInAs/InP p-i-n photodetectors
Microwave Opt Technol Lett, 5 (297-300):

← 1 2 3 4 5 →