Dynamics of GaN band edge photoluminescence at near-room-temperature regime

被引：0

作者：

Chen, Xiang-Bai ^{[1
]}

Huso, Jesse ^{[1
]}

Morrison, John L. ^{[1
]}

Bergman, Leah ^{[1
]}

机构：

[1] Department of Physics, University of Idaho, Moscow, ID 83844-0903

来源：

Journal of Applied Physics | 1600年 / 99卷 / 04期

关键词：

In this paper we present an approach based on the known radiative recombination rate model to study the dynamics and characteristics of photoluminescence (PL) transitions at room-temperature (RT) regime of GaN thin film. The model states that the dependence of the PL intensity on the laser excitation intensity is IPL ∝ Ilaserα in which the value of the exponent α reveals whether the PL is due to an exciton or band gap recombination mechanism. We elaborated on the model and studied the temperature behavior of the exponent α in the range of 180-400 K in order to explore the recombination type for that range. It was found that at the temperature range just below RT ∼180-270 K the exponent is a slowly increasing function of temperature and has an average value of ∼1.2; implying a free-exciton recombination mechanism. At ∼280 K the value of the exponent was found to exhibit a step-function-like behavior with a sharp increase from 1.2 to 1.7. At the temperature range just above RT ∼300-400 K the exponent was found again to be a slowly increasing function of temperature with an average value of ∼1.7; implying that at that temperature range the PL involves mainly band gap transitions. From the temperature behavior of the exponent; the activation energy of the free exciton was inferred to be ∼24 meV. © 2006 American Institute of Physics;

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摘要：

Journal article (JA)

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