Non-volatile Al2O3 memory using nanoscale Al-rich Al2O3 thin film as a charge storage layer

被引：0

作者：

Nakata, Shunji ^{[1
]}

Saito, Kunio ^{[1
,2
]}

Shimada, Masaru ^{[1
]}

机构：

[1] NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[2] NTT AFTY Corporation, Shimorenjaku, Mitaka, Tokyo 181-0013, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期

关键词：

This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure; while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T = 85°C. Also; another new memory structure comprising SiO 2/Al2O3 and the Al-rich Al2O 3 structure is proposed; which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface. ©2006 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

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页码：3176 / 3178