Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions

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[1] [1,Mao, H.J.
[2] Miao, P.X.
[3] Cong, J.Z.
[4] Song, C.
[5] Cui, B.
[6] Peng, J.J.
[7] Li, F.
[8] Wang, G.Y.
[9] Zhao, Y.G.
[10] Sun, Y.
[11] Xiao, L.R.
[12] Pan, F.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 116期
关键词：
Interfaces (materials) - Electric resistance - Tunnelling magnetoresistance;
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