Impact of encroaching length and taper on double gate tunnel FET performance using TCAD simulations

被引：0
作者：
Sugi, S.Shinly Swarna [1 ]
Nagarajan, K.K. [2 ]
Srinivasan, R. [1 ]
机构：
[1] IT Department, SSN College of Engineering, Chennai
[2] MCA Department, SSN College of Engineering, Chennai
来源：
Proceedings of IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2013 | 2013年
关键词：
Encroaching length; Taper; TCAD; Tunnel FET;
D O I：
10.1109/ICCPCT.2013.6528880
中图分类号：
学科分类号：
摘要：
A double gate Tunnel FET structure with taper at the source-channel junction with source region encroaching further into the channel is studied using TCAD simulations. The device simulations have been implemented for different taper angles and source encroachment length, and the transfer characteristics (ID-VG) are studied. An optimum taper angle is seen for the device with a particular source encroachment length, considering the drive current (ION) as metric. © 2013 IEEE.
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页码：942 / 947
页数：5
相关论文
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