Impedance behavior of spin-valve transistor

被引：0

作者：

Peng, T.Y. ^{[1
]}

Chen, S.Y. ^{[1
]}

Hsieh, L.C. ^{[2
,3
]}

Lo, C.K. ^{[2
,3
]}

Huang, Y.W. ^{[2
,3
]}

Chien, W.C. ^{[4
]}

Yao, Y.D. ^{[1
,5
]}

机构：

[1] Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

[2] Electronics and Optoelectronics Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

[3] Nano Technology Research Center, ITRI, Hsinchu 310, Taiwan

[4] Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan

[5] Institute of Physics, Academia Sinica, Taipei 115, Taiwan

来源：

Journal of Applied Physics | 2006年 / 99卷 / 08期

关键词：

Transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

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