Enhancement of dopant activation in B-implanted diamond by high-temperature annealing

被引：0
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作者：
Tsubouchi, Nobuteru [1 ]
Ogura, Masahiko [2 ,3 ]
机构：
[1] Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
[2] Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
[3] Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 1期
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摘要：
Journal article (JA)
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页码：7047 / 7051
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