Enhancement in layer-by-layer growth in heteroepitaxial growth of Co on Au(111) surface by Bi surfactant

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作者
Kamiko, Masao [1 ]
Mizuno, Hiroyuki [1 ]
Chihaya, Hiroaki [1 ]
Yamamoto, Ryoichi [1 ]
Xu, Junhua [2 ]
Kojima, Isao [2 ]
机构
[1] Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[2] Materials Characterization Division, National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1, Tsukuba, Ibaraki 305-8565, Japan
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Journal of Applied Physics | 2006年 / 100卷 / 11期
关键词
The surfactant effect of Bi on the heteroepitaxial growth of Co on the Au(111) surface has been studied. With the predeposition of submonolayer Bi on Au(111) prior to evaporation of Co; more long-lasting reflection high-energy electron diffraction intensity oscillations were observed at room temperature. This implied that Bi enhanced the layer-by-layer growth of Co on the Au(111) surface. The dependence of the Co film growth on the thickness of the Bi surfactant layer suggested that there existed a suitable amount of Bi surfactant that enhanced a smoother layer-by-layer growth. The Auger electron spectra revealed that Bi was segregated at the top of the surface. Therefore; Bi was concluded to be an effective surfactant to enhance the layer-by-layer growth of Co on Au(111). © 2006 American Institute of Physics;
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