Bi-directional isolated DC-DC converter for next-generation power distribution - Comparison of converters using Si and SiC devices

被引：4

作者：

Biela, Juergen ^{[1
]}

Aggeler, Daniel ^{[1
]}

Inoue, Shigenori ^{[2
]}

Akagi, Hiroflimi ^{[2
]}

Kolar, Johann W. ^{[1
]}

机构：

[1] ETH Zurich, Power Electronic Systems Laboratory, Physikstrasse 3, 8092 Zurich, Switzerland

[2] Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Tokyo, Japan

来源：

IEEJ Transactions on Industry Applications | 2008年 / 128卷 / 07期

关键词：

Analog circuits - DC transformers - Electric inverters - Silicon - Junction gate field effect transistors - MOSFET devices - DC-DC converters - HVDC power transmission - Cascode amplifiers;

D O I：

10.1541/ieejias.128.901

中图分类号：

学科分类号：

摘要：

In this paper two bi-directional DC-DC converters for a 1 MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs. In the comparison also the high frequency, high voltage transformer, which ensures galvanic isolation and which is a core element of the DC-DC converter, is examined in detail by analytic calculations and FEM simulations. For validating the analytical considerations a 20 kW SiC DC-DC converter has been designed in detail. Measurement results for the switching and conduction losses have been acquired from the SiC and also for a Si system for calculating the losses of the scaled 1 MW system. © 2008 The Institute of Electrical Engineers of Japan.

引用

页码：901 / 909