Leakage current model of polycrystalline silicon thin-film transistors for device characterization and circuit simulation

被引：3
作者：
Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China [1 ]
机构：
[1] Institute of Microelectronics, South China University of Technology
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | 2007年 / 12卷 / 7626-7631期
关键词：
Electric field; Emission; Leakage current; Polycrystalline silicon thin-film transistors; Trap states;
D O I：
10.1143/JJAP.46.7626
中图分类号：
学科分类号：
摘要：
Carrier emission due to trap states is considered to be the most important factor influencing the leakage generation of polycrystalline silicon thin-film transistors (poly-Si TFTs). An analytical relation between the field enhanced emission rate ratio and electric field is proposed, which accounts for the Poole-Frenkel effect. The proposed relation needs no numerical integration, and both the relation and its first derivative are continuous, which are critical in circuit simulation. The maximum electric field near the drain is calculated taking density of trap states into account. The leakage current is studied. And its variations with gate and drain voltages are compared with available experimental data. The temperature dependence of leakage current is also shown. The results show an excellent agreement with experimental data. © 2007 The Japan Society of Applied Physics.
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页码：7626 / 7631
页数：5
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