Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator

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作者：
Sadoh, Taizoh [1 ]
Toko, Kaoru [1 ]
Kanno, Hiroshi [1 ]
Masumori, Shunji [2 ]
Itakura, Masaru [2 ]
Kuwano, Noriyuki [2 ]
Miyao, Masanobu [1 ]
机构：
[1] Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
[2] Department of Applied Science for Electronics and Materials, Kyushu University, Fukuoka 816-8580, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 2期
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页码：1876 / 1879
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