Selective emitter silicon solar cells with silicon nitride mask

In this paper, firstly the research was conducted by SiNxmask with the thickness of 80 nm was deposited on silicon substrate by plasma enhanced chemical vapor depositon (PECVD), then etching paste with a certain amount of phosphoric acid was printed by using a conventional screen printing process onto silicon nitride mask, so the heavily diffused regions can be only realized in the local structure areas. And an adjustable light diffusion can be achieved after removed the remaining SiNxby hydrofluoric acid. Therefore, the selective emitter was realized by two diffusion steps. In contrast to the laser treated wafers, plasma etching and photolithography, the opening of the SiNxmask with an etching paste could increase the production. Also, investment and operation costs are lower. It is easy to realize in the production line. The electronic characteristics and spectral response of the selective emitter silicon solar cells and conventional silicon solar cells were compared in the end of this paper, the selective emitter silicon solar cells have better blue reponse than conventional solar cells, an efficiency gain up to 0.3%.