Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

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机构：
[1] Pan, T.S.
[2] Zhang, Y.
[3] Huang, J.
[4] Zeng, B.
[5] Hong, D.H.
[6] Wang, S.L.
[7] Zeng, H.Z.
[8] Gao, M.
[9] Huang, W.
[10] Lin, Y.
来源：
Zhang, Y. (zhangyin620@uestc.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 112期
关键词：
The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures; surface morphologies; interface structures; chemical compositions; and thermal conductivity using x-ray diffraction analysis; atomic force microscopy; high resolution transmission electron microscopy; x-ray photoelectron spectroscopy; and 3-omega method; respectively. By optimizing the interface microstructure and the growth temperature; thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK; when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface. © 2012 American Institute of Physics;
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