Intense white photoluminescence emission of V-implanted zinc oxide thin films

被引：0

作者：

Müller, Sven ^{[1
]}

Lorenz, Michael ^{[2
]}

Czekalla, Christian ^{[2
]}

Benndorf, Gabriele ^{[2
]}

Hochmuth, Holger ^{[2
]}

Grundmann, Marius ^{[2
]}

Schmidt, Heidemarie ^{[3
]}

Ronning, Carsten ^{[4
]}

机构：

[1] II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

[2] Institute of Experimental Physics II, University of Leipzig, Linnstraße 5, 04103 Leipzig, Germany

[3] Forschungszentrum Dresden-Rosendorf E.V., Bautzner Landstraße 128, 01328 Dresden, Germany

[4] Institute for Solid State Physics, Friedrich-Schiller-University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany

来源：

Journal of Applied Physics | 2008年 / 104卷 / 12期

关键词：

Pulsed laser deposited ZnO films were implanted with vanadium ions using ion energies between 30 and 250 keV with different fluences yielding vanadium concentrations in the range between 0.8 and 5 at. %. After annealing under oxygen ambient at 800 °C; a broad luminescence band observed by photoluminescence covers nearly the total visible spectral region. This luminescence is a superposition of different bands triggered by the incorporated V and remaining implantation defects. The visual impression of the bright whitish emission of the implanted ZnO has been quantified using the color space map of the Commission internationale de l'Éclairage. Furthermore; the intensity of the white emission strongly increases with increasing V concentration; whereas Ar-implanted reference sample shows only weak white emission. © 2008 American Institute of Physics;

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摘要：

Journal article (JA)

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