Intense white photoluminescence emission of V-implanted zinc oxide thin films

被引：0
|
作者：
Müller, Sven [1 ]
Lorenz, Michael [2 ]
Czekalla, Christian [2 ]
Benndorf, Gabriele [2 ]
Hochmuth, Holger [2 ]
Grundmann, Marius [2 ]
Schmidt, Heidemarie [3 ]
Ronning, Carsten [4 ]
机构：
[1] II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
[2] Institute of Experimental Physics II, University of Leipzig, Linnstraße 5, 04103 Leipzig, Germany
[3] Forschungszentrum Dresden-Rosendorf E.V., Bautzner Landstraße 128, 01328 Dresden, Germany
[4] Institute for Solid State Physics, Friedrich-Schiller-University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
Pulsed laser deposited ZnO films were implanted with vanadium ions using ion energies between 30 and 250 keV with different fluences yielding vanadium concentrations in the range between 0.8 and 5 at. %. After annealing under oxygen ambient at 800 °C; a broad luminescence band observed by photoluminescence covers nearly the total visible spectral region. This luminescence is a superposition of different bands triggered by the incorporated V and remaining implantation defects. The visual impression of the bright whitish emission of the implanted ZnO has been quantified using the color space map of the Commission internationale de l'Éclairage. Furthermore; the intensity of the white emission strongly increases with increasing V concentration; whereas Ar-implanted reference sample shows only weak white emission. © 2008 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Intense white photoluminescence emission of V-implanted zinc oxide thin films
    Mueller, Sven
    Lorenz, Michael
    Czekalla, Christian
    Benndorf, Gabriele
    Hochmuth, Holger
    Grundmann, Marius
    Schmidt, Heidemarie
    Ronning, Carsten
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [2] Tunable visible emission and warm white photoluminescence of lithium-doped zinc oxide thin films
    Wang, Mingsong
    Shin, Eun Woo
    Chung, Jin Suk
    Hur, Seung Hyun
    Kim, Eui Jung
    Hahn, Sung Hong
    Koo, Kee-Kahb
    JOURNAL OF MATERIALS SCIENCE, 2010, 45 (15) : 4111 - 4114
  • [3] Tunable visible emission and warm white photoluminescence of lithium-doped zinc oxide thin films
    Mingsong Wang
    Eun Woo Shin
    Jin Suk Chung
    Seung Hyun Hur
    Eui Jung Kim
    Sung Hong Hahn
    Kee-Kahb Koo
    Journal of Materials Science, 2010, 45 : 4111 - 4114
  • [4] OPTICAL AND PHOTOLUMINESCENCE CHARACTERISTICS OF POLYCRYSTALLINE ZINC OXIDE THIN FILMS
    Rusu, D. I.
    Evtodiev, I.
    Caraman, I.
    Rusu, G.
    JOURNAL OF OPTOELECTRONIC AND BIOMEDICAL MATERIALS, 2014, 6 (03): : 63 - 74
  • [5] Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing
    Bai, Wei
    Zhu, Xia
    Zhu, Ziqiang
    Chu, Junhao
    APPLIED SURFACE SCIENCE, 2008, 254 (20) : 6483 - 6488
  • [6] Roughness effect on photoluminescence of cerium doped zinc oxide thin films
    El Jouad, M.
    Lamrani, M. Alaoui
    Sofiani, Z.
    Addou, M.
    El Habbani, T.
    Fellahi, N.
    Bahedi, K.
    Dghoughi, L.
    Monteil, A.
    Sahraoui, B.
    Dabos, S.
    Gaumer, N.
    OPTICAL MATERIALS, 2009, 31 (09) : 1357 - 1361
  • [7] Intense UV photoluminescence emission at room temperature in SnO2 thin films
    S. SujathaLekshmy
    L. V. Maneeshya
    P. V. Thomas
    K. Joy
    Indian Journal of Physics, 2013, 87 : 33 - 38
  • [8] Intense UV photoluminescence emission at room temperature in SnO2 thin films
    SujathaLekshmy, S.
    Maneeshya, L. V.
    Thomas, P. V.
    Joy, K.
    INDIAN JOURNAL OF PHYSICS, 2013, 87 (01) : 33 - 38
  • [9] Near band-gap emission in V-implanted and annealed 4H-SiC
    Henry, A
    Egilsson, T
    Ivanov, IG
    Harris, CI
    Savage, S
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 497 - 500
  • [10] Near band-gap emission in V-implanted and annealed 4H-SiC
    Henry, A.
    Egilsson, T.
    Ivanov, I.G.
    Harris, C.I.
    Savage, S.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 497 - 500
12345