Effect of crystalline phase formation on optical properties of TiSi2 thin films

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State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China [1 ]
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Taiyangneng Xuebao | 2006年 / 12卷 / 1185-1190期
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[41]   SILICON LOSS DURING TISI2 FORMATION [J].
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BERTI, M ;
DRIGO, AV .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5187-5189
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CLEVENGER, LA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) :1347-1350
[43]   ELECTRICAL TRANSPORT AND INSITU X-RAY STUDIES OF THE FORMATION OF TISI2 THIN-FILMS ON SI [J].
HENSEL, JC ;
VANDENBERG, JM ;
UNTERWALD, FC ;
MAURY, A .
APPLIED PHYSICS LETTERS, 1987, 51 (14) :1100-1102
[44]   TiSi2 phase transformation by amorphization techniques [J].
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Ostling, M .
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