Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

被引：0
作者：
Chen F. [1 ]
Fang X. [1 ]
Wang S. [2 ]
Niu S. [1 ]
Fang F. [3 ]
Fang D. [1 ]
Tang J. [1 ]
Wang X. [1 ]
Liu G. [1 ]
Wei Z. [1 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Lasers, School of Science, and School of Photoelectric Engineering, Changchun University of Science and Technology, Changchun
[2] National Key Laboratory of Optical and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun
[3] National Institute Silicon of LED on Si Substrate, Nanchang University, Nanchang
来源：
Hongwai yu Jiguang Gongcheng Infrared Laser Eng. | / 4卷
关键词：
Aluminum nitride; Crystallization; Deposition temperature; Growth rate; Plasma enhanced atomic layer deposition; Surface roughness;
D O I：
10.3788/IRLA201645.0421001
中图分类号：
学科分类号：
摘要：
The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300℃, 350℃ and 370℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370℃. © 2016, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
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页数：4
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