Spin-Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing

被引:0
|
作者
Kim, Seong Been [1 ,2 ]
Lee, Je-Jun [3 ]
Choi, Dongwon [2 ,4 ]
Kim, Seung-Hwan [2 ]
Ahn, Jeong Ung [1 ,2 ]
Han, Ki Hyuk [1 ,2 ]
Park, Tae-Eon [2 ]
Lee, OukJae [2 ]
Lee, Ki-Young [2 ]
Hong, Seokmin [2 ]
Min, Byoung-Chul [2 ]
Kim, Hyung-Jun [2 ]
Hwang, Do Kyung [1 ,3 ,5 ]
Koo, Hyun Cheol [1 ,2 ]
机构
[1] KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul
[2] Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul
[3] Center for Quantum Technology, Korea Institute of Science and Technology, Seoul
[4] Department of Electrical Engineering, Korea University, Seoul
[5] Division of Nanoscience & Technology, KIST School, University of Science and Technology, Seoul
关键词
artificial synapses; multistate memory; neuromorphic computing; Rashba spin−orbit coupling; spin−charge conversion;
D O I
10.1021/acsaelm.4c02048
中图分类号
学科分类号
摘要
A synaptic function is demonstrated using spin-charge conversion in a Rashba system. In an asymmetric quantum well channel, fast-moving charges induce a Rashba effective magnetic field, which separates spin-up and spin-down potentials. The ferromagnet detects these spin-dependent potentials, corresponding to the spin information on the channel. The multiple ferromagnetic electrodes, each with different switching fields, probe their respective spin potentials, and the output terminal reads the superposition of the detected potentials, thereby realizing multiple voltage states. These multiple states are systematically modulated and changed to any desired state directly, enabling both the potentiation and depression of synaptic behavior. In this memristive function device, both charge-to-spin and spin-to-charge conversions are demonstrated in a single device, consistent with the reciprocal relation. Additionally, neuromorphic pattern recognition is clearly demonstrated by controlling the Vmax/Vmin ratio and offset resistance. © 2024 American Chemical Society.
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页码:571 / 581
页数:10
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