Effect of high energy electron irradiation on structure and optical properties of ZnO films

被引：0

作者：

机构：

[1] Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 03680 Kyiv

[2] Institute of Electron Physics, NAS of Ukraine, 88017 Uzhgorod

[3] Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv

[4] Fedkovich Chernivtsi National University, 58012 Chernivtsi

来源：

Myroniuk, D.V. (denysmyroniuk@gmail.com) | 2013年 / Polska Akademia Nauk卷 / 124期

关键词：

D O I：

10.12693/APhysPolA.124.891

中图分类号：

学科分类号：

摘要：

Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 1016 and 2 × 1016 cm-2. As-grown and irradiated samples were investigated by X-ray Diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.

引用

页码：891 / 894

页数：3

共 21 条

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