Inversion layer effective mobility model for pocket implanted nano scale n-MOSFET

被引：0
|
作者：
Bhuyan, Muhibul Haque [1 ,2 ]
Khosru, Quazi D. M. [1 ]
机构：
[1] Department of Electrical and Electronic Engineering (EEE) of Bangladesh, University of Engineering and Technology (BUET), Dhaka, Bangladesh
[2] Department of Electrical and Computer Engineering, Presidency University, Dhaka, Bangladesh
来源：
World Academy of Science, Engineering and Technology | 2011年 / 73卷
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摘要：
36
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页码：65 / 72
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