A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

被引：0

作者：

Zhang, Zi-Qi ^{[1
]}

Huang, Xiao-Long ^{[2
]}

Zhou, Liang ^{[1
]}

Huang, Yin-Shan ^{[1
]}

Zhang, Cheng-Rui ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab Radio Frequency Heterogeneous Integr, Shanghai 200240, Peoples R China

[2] Princeton Univ, Dept Elect & Comp Engn, Princeton, NJ 08544 USA

来源：

IEEE JOURNAL OF MICROWAVES | 2024年 / 4卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Couplings; Waveguide transitions; Scattering parameters; Radar; Bandwidth; Packaging; Equivalent circuits; Rectangular waveguides; Dielectric constant; Coplanar waveguides; Benzocyclobutene (BCB); self-packaged; transition; MEMS; silicon-based; low loss; system in packaging; cavity-backed; through silicon ring trench (TSRT); D-band; W-BAND; CHIP; INTERCONNECTS; ANTENNA;

D O I：

10.1109/JMW.2024.3459909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel D-band self-packaged silicon-based air cavity-backed transition from grounded coplanar waveguide to air-filled rectangular waveguide was investigated, fabricated, and measured in this work. The equivalent circuit model was established and analyzed in detail, and design procedures are given. The calculated, simulated, and measured S-parameters of the transition show some agreement. The minimum measured insertion loss of the proposed transition is 1.1 dB at 147 GHz with a fractional 3-dB bandwidth of 10.2%. This transition demonstrates outstanding performance of low loss and profile compared with state-of-the art works in our in-house silicon-based MEMS photosensitive composite film fabrication process. It can be further used in a high-performance joint radar communication system in packaging.

引用

页码：767 / 776

页数：10

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