Low temperature diffusion of impurities in hydrogen implanted silicon

被引：0
|
作者：
Personnic, S. [1 ]
Bourdelle, K.K. [1 ]
Letertre, F. [1 ]
Tauzin, A. [2 ]
Laugier, F. [2 ]
Fortunier, R. [3 ]
Klocker, H. [3 ]
机构：
[1] Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, 38926 Crolles Cedex, France
[2] CEA-DRT-LETI, CEA-GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
[3] EMSE, 158 cours Fauriel, 42023 Saint-Etienne Cedex 2, France
来源：
Journal of Applied Physics | 2007年 / 101卷 / 08期
关键词：
The effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen; carbon; and fluorine during low temperature; &le450; °C; isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced; as compared to the literature values; diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
引用
收藏
相关论文
共 50 条
  • [21] Evidence for H2* trapped by carbon impurities in silicon
    Hourahine, B
    Jones, R
    Öberg, S
    Briddon, PR
    Markevich, VP
    Newman, RC
    Hermansson, J
    Kleverman, M
    Lindström, JL
    Murin, LI
    Fukata, N
    Suezawa, M
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 197 - 201
  • [22] Defects in carbon and oxygen implanted p-type silicon
    Pivac, B
    Kovacevic, I
    Borjanovic, V
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 355 - 359
  • [23] Diffusion of boron in silicon and silicon-germanium in the presence of carbon
    Karunaratne, MSA
    Bonar, JM
    Zhang, J
    Ashburn, P
    Willoughby, AIW
    DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2, 2005, 237-240 : 998 - 1003
  • [24] Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure
    Peng, Tao
    Lv, Haifeng
    He, Daping
    Pan, Mu
    Mu, Shichun
    SCIENTIFIC REPORTS, 2013, 3
  • [25] Electrochemical performance of silicon nanostructures in low-temperature ionic liquids for microelectronic applications
    Platek, A.
    Piwek, J.
    Fic, K.
    Schubert, T.
    Gentile, P.
    Bidan, G.
    Frackowiak, E.
    JOURNAL OF MATERIALS CHEMISTRY A, 2017, 5 (43) : 22708 - 22716
  • [26] Incorporation, diffusion and agglomeration of carbon in silicon
    Lavéant, P
    Werner, P
    Gerth, G
    Gösele, U
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 189 - 194
  • [27] Removal of Hydrogen Sulfide by Hydroxyl-Ferric Oxide in a Slurry Reactor at Low Temperature
    Wang, Tao
    Hu, Bing
    Li, Jing-Wen
    Nie, Long-Hui
    Tan, Jun-Jun
    INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 2020, 59 (04) : 1402 - 1412
  • [28] Reducing Impurities of Multicrystalline Silicon in a Unidirectional Solidification Furnace for Solar Cells
    Gao, B.
    Nakano, S.
    Kakimoto, K.
    JOM, 2011, 63 (10) : 43 - 46
  • [29] Room temperature ferromagnetism in carbon-implanted ZnO
    Zhou, Shengqiang
    Xu, Qingyu
    Potzger, Kay
    Talut, Georg
    Groetzschel, Rainer
    Fassbender, Juergen
    Vinnichenko, Mykola
    Grenzer, Joerg
    Helm, Manfred
    Hochmuth, Holger
    Lorenz, Michael
    Grundmann, Marius
    Schmidt, Heidemarie
    APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [30] Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture
    Chan, T. K.
    Koh, S. Y.
    Fang, V.
    Markwitz, A.
    Osipowicz, T.
    APPLIED SURFACE SCIENCE, 2014, 314 : 322 - 330
12345