Low temperature diffusion of impurities in hydrogen implanted silicon

被引：0

作者：

Personnic, S. ^{[1
]}

Bourdelle, K.K. ^{[1
]}

Letertre, F. ^{[1
]}

Tauzin, A. ^{[2
]}

Laugier, F. ^{[2
]}

Fortunier, R. ^{[3
]}

Klocker, H. ^{[3
]}

机构：

[1] Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, 38926 Crolles Cedex, France

[2] CEA-DRT-LETI, CEA-GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France

[3] EMSE, 158 cours Fauriel, 42023 Saint-Etienne Cedex 2, France

来源：

Journal of Applied Physics | 2007年 / 101卷 / 08期

关键词：

The effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen; carbon; and fluorine during low temperature; &le450; °C; isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced; as compared to the literature values; diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime. © 2007 American Institute of Physics;

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摘要：

Conference article (CA)

引用

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