Effects of Li concentration in the precursor solution on NiO thin films deposited using electrostatic spray deposition

被引:0
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作者
Okubo, Keito [1 ]
Sugiyama, Mutsumi [1 ]
机构
[1] Tokyo Univ Sci, Fac Sci & Technol, 2641 Yamazaki, Noda, Chiba 2788510, Japan
关键词
nickel oxide; photovoltatics; electrostatic spray deposition; NICKEL-OXIDE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; HOLE TRANSPORT; SEMICONDUCTORS; SENSOR;
D O I
10.35848/1347-4065/ad8c07
中图分类号
O59 [应用物理学];
学科分类号
摘要
Undoped and Li-added NiO thin films were deposited using electrostatic spray deposition (ESD) techniques. Initially, the NiO thin films displayed minimal contamination, predominantly C and H. The NiO thin films exhibited a flat surface morphology comprising grains of uniform size, approximately 20-30 nm in diameter, and reliable crystal growth, with a full width at half maximum of approximately 0.30 in X-ray diffraction analysis. Moreover, the NiO/ZnO diode demonstrated superior properties when a 5 at% Li concentration solution was incorporated. The rectification ratio reached approximately 2.3 x 103 at +/- 1.0 V, with an ideality factor of 1.9. Additionally, the NiO/ZnO diodes exhibited remarkable photovoltaic properties even without detailed optimization. These findings underscore the potential of ESD in advancing semiconductor thin-film technology, thereby paving the way for more cost-effective and scalable production methods.
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页数:6
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