Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism

被引:0
作者
Chen, Dongshun [1 ,2 ]
Zhou, Tianyuan [1 ,2 ]
Zhang, Le [1 ,2 ,3 ]
Tian, Wen [1 ]
Zhang, Xinyuan [2 ]
Shi, Chaofan [2 ]
Wang, Hongsen [1 ]
Zhou, Zihan [1 ]
Huang, Baojin [4 ]
Strek, Wieslaw [5 ]
Chen, Hao [1 ,2 ,6 ]
机构
[1] Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Peoples R China
[2] Jiangsu Xiyi Adv Mat Res Inst Ind Technol, Xuzhou 221400, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[4] Jiangnan Shipyard Grp Co Ltd, Shanghai 201913, Peoples R China
[5] Polish Acad Sci, Inst Low Temp & Struct Res, PL-50422 Wroclaw, Poland
[6] Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Suzhou 215009, Peoples R China
基金
中国国家自然科学基金;
关键词
STIMULATED LUMINESCENCE; EU2+; ALUMINATE; AFTERGLOW; MECHANOLUMINESCENCE; THERMOLUMINESCENCE; CE3+;
D O I
10.1063/5.0233664
中图分类号
O59 [应用物理学];
学科分类号
摘要
SrAl2O4:Eu2+, Dy3+ as an excellent persistent phosphor has been widely applied in many fields. However, the high temperature induced thermal failure has always been a bottleneck problem restricting its long-term development. In this study, a simple pre-annealing method was utilized to improve the thermal damage resistance ability of SrAl2O4:Eu2+, Dy3+ persistent phosphors. After annealing at 900 degrees C, the afterglow duration time of the phosphor pre-annealed at 400 degrees C reached 233 min, which was twice longer than that of the phosphor without pre-annealing. An extrinsic vacancy defect migration theory at an elevated temperature was proposed to explain the interesting phenomenon. This study introduced a path to enhance the thermal stability of SrAl2O4:Eu2+, Dy3+ persistent phosphors and provided a thought to design persistent luminescence materials with desired thermal stability.
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页数:7
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