Study on the growth of ZnS thin films on metal foil substrate by sulfurization method

被引:0
作者
Xu, Jiaxiong [1 ]
Luo, Shaokui [1 ]
Xin, Fulian [1 ]
机构
[1] School of Materials and Energy, Guangdong University of Technology, Guangzhou
来源
Gongneng Cailiao/Journal of Functional Materials | 2015年 / 46卷 / 23期
关键词
Aluminum foil substrate; Sulfurization method; Thin film; XRD; ZnS;
D O I
10.3969/j.issn.1001-9731.2015.23.030
中图分类号
学科分类号
摘要
The ZnS thin films were deposited on aluminum foil substrates by the two-step method of sulfurization of sputtered Zn thin films. The effect of sulfurization temperature on the properties of thin films was analyzed by the XRD, EDS, and SEM measurements. The experimental results show that the sulfurization temperature of 400℃ can ensure the formation of ZnS by the reaction of Zn and S. The preferred orientation was along the (111) plane. With increasing sulfurization temperature, the intensity of (111) peak and the grain size enhance, that was, the crystallinity of ZnS thin films improves. The compositions of fabricated thin films are close to the stoichiometry of ZnS and show Zn-poor and S-rich properties, indicating the full sulfurization of Zn. The surfaces of thin films are compact, smooth, crack-free, and composed of grains. The experimental results reveal the feasibility of deposition of ZnS thin films on aluminum foil substrate by sulfurization method. © 2015, Chongqing Functional Materials Periodical Press Co. Ltd. All right reserved.
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页码:23144 / 23147and23152
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