Effect of sb doping on thermoelectric property of N-type half-heusler compounds

被引:0
|
作者
机构
[1] [1,Fan, Yi
[2] Li, Xiao-Ya
[3] Jiang, Yong-Fen
[4] Bao, Ye-Feng
来源
Li, Xiao-Ya | 1600年 / Science Press卷 / 29期
关键词
D O I
10.15541/jim20130659
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Effect of Aliovalent Doping on the Thermoelectric Performance of Double Half-Heusler Alloys
    Abhigyan Ojha
    Rama Krushna Sabat
    Appala Naidu Gandi
    Sivaiah Bathula
    Journal of Electronic Materials, 2023, 52 : 5473 - 5484
  • [32] Improving thermoelectric properties of ZrPtSn-based half-Heusler compound by Sb doping
    Chu-Kun Dai
    Qing-Feng Song
    Li Xie
    Rui-Heng Liu
    Sheng-Qiang Bai
    Li-Dong Chen
    Rare Metals, 2021, 40 : 2838 - 2846
  • [33] Thermoelectric properties of n-type half-Heusler NbCoSn with heavy-element Pt substitution
    Serrano-Sanchez, Federico
    Luo, Ting
    Yu, Junjie
    Xie, Wenjie
    Le, Congcong
    Auffermann, Gudrun
    Weidenkaff, Anke
    Zhu, Tiejun
    Zhao, Xinbing
    Alonso, Jose A.
    Gault, Baptiste
    Felser, Claudia
    Fu, Chenguang
    JOURNAL OF MATERIALS CHEMISTRY A, 2020, 8 (29) : 14822 - 14828
  • [34] Enhancement in Thermoelectric Figure-Of-Merit of an N-Type Half-Heusler Compound by the Nanocomposite Approach
    Joshi, Giri
    Yan, Xiao
    Wang, Hengzhi
    Liu, Weishu
    Chen, Gang
    Ren, Zhifeng
    ADVANCED ENERGY MATERIALS, 2011, 1 (04) : 643 - 647
  • [35] Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn
    Lkhagvasuren, Enkhtaivan
    Ouardi, Siham
    Fecher, Gerhard H.
    Auffermann, Gudrun
    Kreiner, Guido
    Schnelle, Walter
    Felser, Claudia
    AIP ADVANCES, 2017, 7 (04):
  • [36] Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01
    Kempf, Nicholas
    Karthik, Chinnathambi
    Jaques, Brian J.
    Gigax, Jonathan
    Shao, Lin
    Butt, Darryl P.
    He, Ran
    Wang, Dezhi
    Ren, Zhifeng
    Zhang, Yanliang
    APPLIED PHYSICS LETTERS, 2018, 112 (24)
  • [37] Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds
    Lee, Mal-Soon
    Poudeu, Ferdinand P.
    Mahanti, S. D.
    PHYSICAL REVIEW B, 2011, 83 (08)
  • [38] Electronic structure and thermoelectric properties of HfRhZ(Z = As, Sb and Bi) half-Heusler compounds
    Bamgbose, Muyiwa K.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (07):
  • [39] Electronic structure and thermoelectric properties of HfRhZ(Z = As, Sb and Bi) half-Heusler compounds
    Muyiwa K. Bamgbose
    Applied Physics A, 2020, 126
  • [40] Enhancement of thermoelectric properties at room temperature through isoelectronic ruthenium-substitution in n-type half-Heusler VFeSb compounds
    Huang, Yi
    Hayashi, Kei
    Miyazaki, Yuzuru
    ACTA MATERIALIA, 2022, 237