Numerical simulation of the chemical vapor deposition of polycrystalline silicon in a trichlorosilane and hydrogen system

被引:0
作者
Zhang, Pan [1 ]
Wang, Wei-Wen [2 ]
Dong, Hai-Hong [2 ]
Wu, Yu-Lei [2 ]
Chen, Guang-Hui [2 ]
Li, Jian-Long [2 ]
机构
[1] College of Electronmechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, China
[2] College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao 266043, China
来源
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
22
引用
收藏
页码:494 / 499
相关论文
empty
未找到相关数据