Pressure-induced superconductivity and phase transition in PbSe and PbTe

被引:1
|
作者
Jiang, Yuyang [1 ]
Pei, Cuiying [1 ]
Wang, Qi [1 ,2 ]
Wu, Juefei [1 ]
Zhang, Lili [3 ]
Xiong, Chao [1 ]
Qi, Yanpeng [1 ,2 ,4 ]
机构
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[2] ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
[3] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil, Shanghai 201203, Peoples R China
[4] ShanghaiTech Univ, Shanghai Key Lab High Resolut Electron Microscopy,, Shanghai 201210, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
IV-VI semiconductor; high pressure; superconductivity; crystal structure; NANOCRYSTALS SYNTHESIS; CRITICAL-FIELD; TEMPERATURE; SPIN; GESE; GAP;
D O I
10.1088/1674-1056/ad8ecc
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The IV-VI semiconducting chalcogenides are a large material family with distinct physical behavior. Here, we systematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction (XRD) measurements. The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of rho(T) is observed. Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure. The structural evolutions from the Fm (3) over barm to Pnma phase and then to the Pm3<overline>m phase in PbSe are verified by the x-ray diffraction. The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.
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页数:8
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