Constructing Efficient and Stable Perovskite Solar Cells by Adjusting Atomic-layer-deposited SnOx Layer via Oxygen Sources

被引:0
作者
Xie Y. [1 ]
Wu S. [1 ]
Gao Y. [1 ]
Liu Y. [1 ]
Guo R. [1 ]
Mai Y. [1 ]
机构
[1] Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou
来源
Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 02期
关键词
atomic layer deposition; oxygen resources adjustment; perovskite solar cells; SnO[!sub]x[!/sub;
D O I
10.37188/CJL.20220325
中图分类号
学科分类号
摘要
SnOx deposited by atomic layer deposition exhibits uniform and dense nature,which is commonly used to improve the stability of inverted planar perovskite solar cells. Meanwhile,the characteristics of SnOx films have an essential impact on power conversion efficiency(PCE)of devices. In this paper,the characteristics of atomic-layer-deposited SnOx are adjusted by the oxygen sources(H2O,O3),including energy level and conductivity,so as to achieve the improvement of PCE of devices. The results show that the SnOx film with O3 as a single oxygen source has good energy level alignment. SnOx,which only has water as an oxygen source(denoted H2O-SnOx),performs higher electrical conductivity. While,taking advantage of mentioned sources,the SnOx(denoted as MIX-SnOx)not only obtains good energy level alignment,but also excellent conductivity,which effectively improves the PCE of the devices,reaching 20.9%. Moreover,thanks to the denseness of SnOx film,it can largely prevent the ingress of moisture into devices,and also inhibit the decomposition of perovskite,dramatically enhancing the stability of perovskite solar cells,which can retain 86% of initial PCE after aging at 85 ℃(nitrogen atmosphere)for more than 646 h. © 2023 Chines Academy of Sciences. All rights reserved.
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页码:337 / 345
页数:8
相关论文
共 29 条
[11]  
CHUA M R,, Et al., Efficient perovskite solar cells via improved carrier management[J], Nature, 590, 7847, pp. 587-593, (2021)
[12]  
CHENG H E, TIAN D C, HUANG K C., Properties of SnO<sub>2</sub> films grown by atomic layer deposition[J], Procedia Eng, 36, pp. 510-515, (2012)
[13]  
GEORGE S M., In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques[J], J. Vac. Sci. Technol. A, 23, 4, pp. 581-588, (2005)
[14]  
BAKER D A, Et al., Atomic layer deposition of tin oxide films using tetrakis(dimethylamino)tin[J], J. Vac. Sci. Technol. A, 26, 2, pp. 244-252, (2008)
[15]  
Indium-free perovskite solar cells enabled by impermeable tin-oxide electron extraction layers[J], Adv. Mater, 29, 27, (2017)
[16]  
LEE J H,, YOO M,, KANG D H,, Et al., Selective SnO<sub>x</sub> atomic layer deposition driven by oxygen reactants[J], ACS Appl. Mater. Interfaces, 10, 39, pp. 33335-33342, (2018)
[17]  
MULLINGS M N, BENT S F., Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water[J], J. Vac. Sci. Technol. A, 31, 6, (2013)
[18]  
MACISAAC C,, KIM W H,, Et al., Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide,tin-oxide,and zinc-tin-oxide[J], J. Chem. Phys, 146, 5, (2017)
[19]  
CHOI D W, PARK J S., The conducting tin oxide thin films deposited via atomic layer deposition using Tet-rakis-dimethylamino tin and peroxide for transparent flexible electronics[J], Appl. Surf. Sci, 313, pp. 585-590, (2014)
[20]  
CHOI D W, PARK J S., Highly conductive SnO<sub>2</sub> thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant[J], Surf. Coat. Technol, 259, pp. 238-243, (2014)