Room-temperature carbon nanotube single-electron transistors fabricated using defect-induced plasma process

被引：0

作者：

Iwasaki, Shin ^{[1
]}

Maeda, Masatoshi ^{[2
]}

Kamimura, Takafumi ^{[1
]}

Maehashi, Kenzo ^{[1
]}

Ohno, Yasuhide ^{[1
]}

Matsumoto, Kazuhiko ^{[1
]}

机构：

[1] Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Iharaki, Osaka 567-0047, Japan

[2] Department of Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8577, Japan

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 1期

关键词：

We propose and demonstrate the defect-induced plasma process for the fabrication of the room-temperature-operated carbon nanotube single-electron transistors (CNT-SETs) with the SiO2 protection films on the CNT channels. After introducing of defects in the CNT channels by O 2 plasma irradiation through the SiO2 protection films; multi-quantum dots were fabricated in the CNT channels. The electrical properties of the CNT-SETs suggested that the oscillation in the drain currents as a function of the gate voltage was observed at room temperature; as a result of the Coulomb blockade effect. Moreover; we report that the yield of the CNT-SETs depended on the thickness of the SiO2 protection films on the CNT channels for the purpose of obtaining a high yield of CNT-SETs. The results indicate that the high yield of the CNT-SETs is as high as approximately 35% when the SiO2 protection film thickness is 60 nm. Consequently; the defect-induced plasma process is useful for obtaining the high yield efficiency of CNT-SETs operating at room temperature. © 2008 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

页码：2036 / 2039

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