Homogenous and ultra-shallow lithium niobate etching by focused ion beam

被引:0
作者
Qu, Minni [1 ]
Shen, Yunliang [1 ]
Wu, Liying [1 ]
Fu, Xuecheng [1 ]
Cheng, Xiulan [1 ]
Wang, Ying [1 ]
机构
[1] Center for Advanced Electronic Materials and Devices, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai,200240, China
关键词
Niobium compounds - Milling (machining) - Etching - Ions - Focused ion beams - Lithium - Lithium compounds - Nanostructures;
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摘要
Focused ion beam (FIB) milling has been used for fast prototyping of lithium niobate (LiNbO3, LN) devices with feature size from sub-to hundreds of micrometers. However, a promising and challenging depth range of tens-of-nanometers or below is rarely attended. Moreover, the surface roughness, related closely with device performances, is particularly non-negligible for such an ultra-shallow etching. Here, the surface roughness evolution was studied on ultra-shallow FIB etched LN structures. It was found that the inhomogeneous etching of the metallic film, coated on LN surface to avoid charge accumulation, had a detrimental effect on the LN surface roughness control. By thinning the gold thickness to 7 nm, sub-nanometer surface roughness was reported for etching depth of several nanometers. This work paves the way towards a homogenous and ultra-shallow FIB milling of LN nano-structures. © 2019
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页码:10 / 15
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