Terahertz wave generation with low-temperature-grown GaAs photoconductive antennas

被引：0

作者：

Li, Tieyuan ^{[1
,2
]}

Lou, Caiyun ^{[1
,2
]}

Wang, Li ^{[1
,2
]}

Huang, Jin ^{[1
,2
]}

Zhao, Guozhong ^{[3
]}

Shi, Xiaoxi ^{[3
]}

机构：

[1] National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University

[2] State Key Joint Laboratory on Integrated Optoelectronics, Tsinghua University

[3] Physics Department, Capital Normal University

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2009年 / 36卷 / 04期

关键词：

Low-temperature-grown GaAs; Photoconductive antenna; Spectroscopy; Terahertz wave; Time domain spectroscopy measurement;

D O I：

10.3788/CJL20093604.0978

中图分类号：

学科分类号：

摘要：

Broadband terahertz (THz) technology has widespread applications in the fields of national defense, scientific research and so on, and photoconductive antenna is an essential approach to generate THz wave. The impact of growing and annealing temperatures on material carrier lifetime and resistivity was analyzed. Four small-aperture photoconductive antennas of BowTie and Dipole structures were fabricated on low-temperature-grown GaAs (LTG-GaAs) grown at 230°C and 250°C respectively, and annealed at 475°C. As a result, the 250°C grown antennas have higher THz wave output power and broader spectrum up to 3.6 THz, in contrast to the 230°C grown one. In addition, the output power generated by BowTie antenna is stronger than Dipole antenna. Moreover, it is verified that both of the small-aperture photoconductive antennas can generate THz wave under 10 V bias voltage.

引用

页码：978 / 982

页数：4

共 12 条

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