Failure analysis of Ge2Sb2Te5 based phase change memory

被引：0
|
作者：
Hong, Sung-Hoon [1 ]
Lee, Heon [1 ]
机构：
[1] Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 5 PART 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：3372 / 3375
相关论文
共 50 条
  • [1] Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory
    Hong, Sung-Hoon
    Lee, Heon
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3372 - 3375
  • [2] RESET failure analysis of phase change memory based on Ge2Sb2Te5
    Wang, Yuchan
    Wang, Yuhan
    Chen, Xiaogang
    Li, Xiaoyun
    IEICE ELECTRONICS EXPRESS, 2017, 14 (17):
  • [3] Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te5
    Wang, Yuchan
    Yuan, Yiming
    Wang, Yuhan
    Yuan, Suzhen
    Chen, Xiaogang
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021, 21 (02) : 236 - 239
  • [4] Microstructural failure in Ge2Sb2Te5 phase change memory cell
    Kim, Yong Tae
    Kim, Young Hwan
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (02): : 435 - 438
  • [5] Failure Analysis of Nitrogen-Doped Ge2Sb2Te5 Phase Change Memory
    Gao, Dan
    Liu, Bo
    Xu, Zhen
    Li, Ying
    Wang, Lei
    Song, Zhitang
    Zhu, Nanfei
    Zhan, Yipeng
    Feng, Songlin
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (01) : 74 - 79
  • [6] Phase change mechanisms in Ge2Sb2Te5
    Privitera, S.
    Lombardo, S.
    Bongiorno, C.
    Rimini, E.
    Pirovano, A.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)
  • [7] Thermal effect of Ge2Sb2Te5 in phase change memory device
    Li Jun-Tao
    Liu Bo
    Song Zhi-Tang
    Ren Kun
    Zhu Min
    Xu Jia
    Ren Jia-Dong
    Feng Gao-Ming
    Ren Wan-Chun
    Tong Hao
    CHINESE PHYSICS B, 2014, 23 (08)
  • [8] Thermal effect of Ge2Sb2Te5 in phase change memory device
    李俊焘
    刘波
    宋志棠
    任堃
    朱敏
    徐佳
    任佳栋
    冯高明
    任万春
    童浩
    Chinese Physics B, 2014, (08) : 125 - 128
  • [9] Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices
    Suh, Dong-Seok
    Kim, Cheolkyu
    Kim, Kijoon H. P.
    Kang, Youn-Seon
    Lee, Tae-Yon
    Khang, Yoonho
    Park, Tae Sang
    Yoon, Young-Gui
    Im, Jino
    Ihm, Jisoon
    APPLIED PHYSICS LETTERS, 2010, 96 (12)
  • [10] Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers
    Zhang, Ting
    Song, Zhitang
    Gong, Yuefeng
    Lin, Yun
    Xu, Cheng
    Chen, Yifeng
    Liu, Bo
    Feng, Songlin
    APPLIED PHYSICS LETTERS, 2008, 92 (11)
12345