Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics

被引：0

作者：

Kumarbekov, Kuat K. ^{[1
]}

Kakimov, Askhat B. ^{[1
]}

Karipbayev, Zhakyp T. ^{[1
]}

Kassymzhanov, Murat T. ^{[1
]}

Brik, Mikhail G. ^{[2
,3
,4
,5
]}

Ma, Chong-geng ^{[6
]}

Piasecki, Michal ^{[4
]}

Suchikova, Yana ^{[7
]}

Kemere, Meldra ^{[8
]}

Konuhova, Marina ^{[8
]}

机构：

[1] Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana

[2] Centre of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences – National Institute of the Republic of Serbia, University of Belgrade, Belgrade

[3] Institute of Physics, University of Tartu, Tartu

[4] Department of Theoretical Physics, Jan Dlugosz University, Czestochowa

[5] Academy of Romanian Scientists, Bucharest

[6] School of Optoelectronic Engineering &CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing

[7] The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, Berdyansk

[8] Institute of Solid State Physics, University of Latvia, 8 Kengaraga, Riga

来源：

Optical Materials: X | 2025年 / 25卷

关键词：

Electron beam-assisted synthesis; Ga₂O₃:Eu; Luminescence; Сeramics;

D O I：

10.1016/j.omx.2024.100392

中图分类号：

学科分类号：

摘要：

This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability. © 2024 The Author(s)

引用

共 35 条

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