Effects of electrostatic-discharge on GaN-based high voltage light-emitting diode

被引：0

作者：

Han, Yu ^{[1
]}

Guo, Wei-Ling ^{[1
]}

Fan, Xing ^{[1
]}

Yu, Xin ^{[1
]}

Bai, Jun-Xue ^{[1
]}

机构：

[1] Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing

来源：

Guangzi Xuebao/Acta Photonica Sinica | 2014年 / 43卷 / 08期

关键词：

Degradation mechanism; Electrostatic discharge; GaN; High-voltage LED; Optical and electrical characteristics;

D O I：

10.3788/gzxb20144308.0823003

中图分类号：

学科分类号：

摘要：

GaN-based high-voltage green light-emitting diodes were biased by negative Human-Body-Mode electrostatic discharge (ESD) with -500, -1 000, -2 000, -3 000, -4 000, -5 000 and -6 000 V. The I-V characteristic and luminous flux under different electrostatic shock voltages were comparative analyzed after each shock. The results show that the LED has a soft breakdown which accompanied with apparent increased reverse leakage current and unapparent luminous flux change, which due to the generation of defect after ESD stressing at -500, -1 000, -2 000, -3 000 and -4 000V; When the device was biased to -5 000 V and -6 000 V, a sharp decrease of luminous flux appears, even decay to 50% of light output than before stressing. And forward voltage and reverse leakage current show a large degree of decrease and increase respectively after ESD shock of -6000V, which is due to the thermal model breakdown at this moment. The thermal model breakdown make temperature rise rapidly and form a melting channel, which disabled the LED eventually.

引用

页数：6

共 13 条

[1] Juntunen E., Sitomaniemi A., Tapaninen O., Et al., Thermal performance comparison of thick-film insulated aluminum substrates with metal core PCBs for high-power LED modules, 2, 12, pp. 1957-1964, (2012)
[2] Luo X.-X., Liu H., Lu Z.-W., Et al., Automated optimization of free-form surface lens for LED collimation, Acta Photonica Sinica, 40, 9, pp. 1351-1355, (2011)
[3] Li W., Yue Q.-Y., Kong F.-M., Et al., Influence of surface ZnO nano-structures on the light emitting efficiency of GaN-based LED, Acta Photonica Sinica, 42, 4, pp. 409-416, (2013)
[4] Chen K.J., Kuo H.T., Chiang Y.C., Et al., Efficiency and droop improvement in hybrid warm white LEDs using InGaN and AlGaInP high-voltage LEDs, 9, 4, pp. 280-284, (2013)
[5] Cao D.-X., Guo Z.-Y., Liang F.-B., Et al., The fabrication and performance analysis of GaN-based HV LED, Chinese Journal of Physics, 61, 13, pp. 511-517, (2012)
[6] Li J.-H., Cui Y.-S., Chen G.-B., Structural phase transition, electronic structures and optical properties of GaN, Acta Photonica Sinica, 42, 2, pp. 161-166, (2013)
[7] Jeon S.K., Lee J.G., Park E.H., Et al., The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties, Applied Physics Letters, 94, 13, (2009)
[8] Meneghini M., Vaccari S., Trivellin N., Et al., Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs, 59, 5, pp. 1416-1422, (2012)
[9] Zhang J.H., Wu B.Q., Shih T.M., Et al., Thermal analyses of alternating current light-emitting diodes, Applied Physics Letters, 103, (2013)
[10] Cao X.A., Sandvik P.M., Leboeuf S.F., Et al., Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses, Microelectronics Reliability, 43, 12, pp. 1987-1991, (2003)

← 1 2 →