A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments

被引:0
作者
Zhang, Quanwei [1 ,2 ]
Liu, Yan [1 ]
Li, Huafeng [1 ]
Wang, Jue [1 ]
Wang, Yuan [1 ]
Cheng, Fabin [1 ]
Han, Haijun [1 ]
Zhang, Peng [1 ]
机构
[1] China Acad Engn Phys, Inst Syst Engn, Mianyang 621900, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China
关键词
high temperature; radiation; extreme environment; sensor technology; silicon carbide (SiC); MEMS sensors; CAPACITIVE PRESSURE SENSOR; INDUCED DEGRADATION; GAMMA-RADIATION; MEMS; FABRICATION; DIODE; BULK; HTCC;
D O I
10.3390/s24237731
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Sensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors to the point of failure. It is noteworthy that, compared to the resistance to overload and vibration achieved through structural design, the application of sensors under high-temperature and radiation extreme conditions poses a greater challenge. Silicon carbide (SiC) material, due to its excellent physical and chemical properties, such as a large band gap and high atomic critical displacement energy, demonstrates outstanding potential for application in high-temperature and radiation extreme environments. This review presents the current status and research progress of SiC sensors in high-temperature and radiation extreme environments. Finally, given the limited research on the radiation resistance of SiC sensors, it identifies several challenges and research deficiencies in the application of SiC sensors under radiation extreme environments and discusses the future development direction of SiC-based substrate sensors.
引用
收藏
页数:18
相关论文
共 100 条
  • [51] Recent advances in energy-saving chemiresistive gas sensors: A review
    Majhi, Sanjit Manohar
    Mirzaei, Ali
    Kim, Hyoun Woo
    Kim, Sang Sub
    Kim, Tae Whan
    [J]. NANO ENERGY, 2021, 79 (79)
  • [52] Proton radiation effects on MEMS silicon strain gauges
    Marinaro, Damian G.
    McMahon, Phillip
    Wilson, Alan
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (03) : 1714 - 1718
  • [53] The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature
    Marsi, N.
    Majlis, B. Y.
    Hamzah, A. A.
    Mohd-Yasin, F.
    [J]. JOURNAL OF ENGINEERING, 2014, 2014
  • [54] RETRACTED: A MEMS packaged capacitive pressure sensor employing 3C-SiC with operating temperature of 500 °C (Retracted article. See vol. 29, pg. 903, 2023)
    Marsi, Noraini
    Majlis, Burhanuddin Yeop
    Hamzah, Azrul Azlan
    Mohd-Yasin, Faisal
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2015, 21 (01): : 9 - 20
  • [55] Silicon carbide MEMS for harsh environments
    Mehregany, M
    Zorman, CA
    Rajan, N
    Wu, CH
    [J]. PROCEEDINGS OF THE IEEE, 1998, 86 (08) : 1594 - 1610
  • [56] Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments
    Motoki, Shu
    Sato, Shin-ichiro
    Saiki, Seiichi
    Masuyama, Yuta
    Yamazaki, Yuichi
    Ohshima, Takeshi
    Murata, Koichi
    Tsuchida, Hidekazu
    Hijikata, Yasuto
    [J]. JOURNAL OF APPLIED PHYSICS, 2023, 133 (15)
  • [57] Okojie R.S., 2014, Addit. Pap. Present, V2014, P000028, DOI [10.4071/HITEC-TA21, DOI 10.4071/HITEC-TA21]
  • [58] High Temperature SiC Pressure Sensors with Low Offset Voltage Shift
    Okojie, Robert S.
    Lukco, Dorothy
    Vu Nguyen
    Savrun, Ender
    [J]. SENSORS FOR EXTREME HARSH ENVIRONMENTS, 2014, 9113
  • [59] Padilla WJ, 2015, INT CONF OPTIC MEMS
  • [60] Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments
    Pitt, E. Bryn
    Barth, Eric J.
    Diggins, Zachary J.
    Mahadevan, Nagabhushan
    Karsai, Gabor
    Sierawski, Brian D.
    Reed, Robert A.
    Schrimpf, Ronald D.
    Weller, Robert A.
    Alles, Michael L.
    Witulski, Arthur F.
    [J]. IEEE SENSORS JOURNAL, 2017, 17 (04) : 1132 - 1143