Effect of ferroelectric polarization on carrier transport in controlled polarization-type ferroelectric gate field-effect transistors with poly(vinylidene fluoride-tetrafluoroethylene)/ZnO heterostructure

被引：0

作者：

Yamada, Hiroaki ^{[1
]}

Yoshimura, Takeshi ^{[1
]}

Fujimura, Norifumi ^{[1
]}

机构：

[1] Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8231, Japan

来源：

关键词：

Compendex;

D O I：

11PB01

中图分类号：

学科分类号：

摘要：

Zinc oxide

引用