Optoelectronic characterization of Si and Be doped GaAs thin films

GaAs materials are widely used in plenty of fields such as field-effect transistors, lasers, photodetectors, etc. However, the electronic state structure of p-type dopant acceptor is much more complicated than that of n-type. In our experiments, we choose the element Be as the dopant acceptor. The doping concentration of the N-type GaAs thin film layer achieved 2.07 x 1018 cm-3 with a mobility of 2097 cm2/V.s at 1250 degrees C for the Si doping source, and the doping concentration of the P-type GaAs thin film reached 1.29 x 1017cm-3 with a mobility of 255.6 cm2/V.s at 800 degrees C for the Be doping source.