A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

被引：83
作者：
Department of Solar Energy, Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover, Germany [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
[1] Department of Solar Energy, Institute of Solid-State Physics, University of Hannover, 30167 Hannover
[2] ETH Zurich, Integrated Systems Laboratory, 8092 Zurich
[3] Synopsys Switzerland LLC, CH-8050 Zürich
[4] School of Computer Science and Engineering, University of New South Wales, Sydney
来源：
J Appl Phys | 2006年 / 11卷
关键词：
Boron - Carrier concentration - Computer simulation - Crystalline materials - Ionization - Mathematical models - Semiconductor doping;
D O I：
10.1063/1.2386935
中图分类号：
学科分类号：
摘要：
Building on Part I of this paper [Altermatt, J. Appl. Phys. 100, 113714 (2006)], the parametrization of the density of states and of incomplete ionization (ii) is extended to arsenic- and boron-doped crystalline silicon. The amount of ii is significantly larger in Si:As than in Si:P. Boron and phosphorus cause a similar amount of ii although the boron energy level has a distinctly different behavior as a function of dopant density than the phosphorus level. This is so because the boron ground state is fourfold degenerate, while the phosphorus ground state is twofold degenerate. Finally, equations of ii are derived that are suitable for implementation in device simulators. Simulations demonstrate that ii increases the current gain of bipolar transistors by up to 25% and that it decreases the open-circuit voltage of thin-film solar cells by up to 10 mV. The simulation model therefore improves the predictive capabilities of device modeling of p-n -junction devices. © 2006 American Institute of Physics.
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