Finite element analysis of stress-induced voiding in copper interconnects

被引：0

作者：

Peng, Jie ^{[1
]}

Han, Junwu ^{[1
]}

Wu, Zhenyu ^{[1
]}

Yang, Yintang ^{[1
]}

Wei, Jingtian ^{[1
]}

Zhu, Lili ^{[1
]}

机构：

[1] Institute of Microelectronics, Xidian University

来源：

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2012年 / 32卷 / 06期

关键词：

Cu interconnect; Finite element analysis; Stress induced-voiding; Thermal stress;

D O I：

10.3969/j.issn.1672-7126.2012.06.03

中图分类号：

学科分类号：

摘要：

The formation, location, and geometry of the thermal stress induced voids in the copper interconnect were modeled, and simulated in finite element method with ABQUS software package. The variations in the distributions of the stress and charges, before and after the void formation, were also studied. The simulated results show that the stress distributes in an anisotropic way; its horizontal gradient is significantly larger than its vertical gradient. The tensile stress seems to maximize on both sides of the via-hole on top of M1, where the void may easily form and rapidly release the interconnection tensile stress. As the void widens, the tensile stress decreases, or turns into the compress stress. The strain energy possibly accounts for the void growth energy. Moreover, in its growth, the initial circular shape slowly changes into elliptic one, possibly because an elliptic void releases more elastic energy.

引用

页码：463 / 467

页数：4

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