Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy

被引：0
|
作者：
He, G. [1 ]
Zhang, L.D. [1 ]
Fang, Q. [2 ]
机构：
[1] Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
[2] London Centre for Nanotechnology and Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
来源：
Journal of Applied Physics | 2006年 / 100卷 / 08期
关键词：
Hafnium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 12 条
  • [1] X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface
    Zhu, L. Q.
    Barrett, N.
    Jegou, P.
    Martin, F.
    Leroux, C.
    Martinez, E.
    Grampeix, H.
    Renault, O.
    Chabli, A.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)
  • [2] Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
    Bersch, E.
    Di, M.
    Consiglio, S.
    Clark, R. D.
    Leusink, G. J.
    Diebold, A. C.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)
  • [3] Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget
    Martinez, E.
    Leroux, C.
    Benedetto, N.
    Gaumer, C.
    Charbonnier, M.
    Licitra, C.
    Guedj, C.
    Fillot, F.
    Lhostis, S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (08) : G120 - G124
  • [4] Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure
    Nagata, T.
    Haemori, M.
    Yamashita, Y.
    Yoshikawa, H.
    Iwashita, Y.
    Kobayashi, K.
    Chikyow, T.
    APPLIED PHYSICS LETTERS, 2011, 99 (22)
  • [5] Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices
    Cartier, E.
    Hopstaken, M.
    Copel, M.
    APPLIED PHYSICS LETTERS, 2009, 95 (04)
  • [6] Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation
    Price, J.
    An, Y. Q.
    Lysaght, P. S.
    Bersuker, G.
    Downer, M. C.
    APPLIED PHYSICS LETTERS, 2009, 95 (05)
  • [7] In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
    Chen, Q.
    Huang, H.
    Chen, W.
    Wee, A. T. S.
    Feng, Y. P.
    Chai, J. W.
    Zhang, Z.
    Pan, J. S.
    Wang, S. J.
    APPLIED PHYSICS LETTERS, 2010, 96 (07)
  • [8] Tunneling of holes observed at work function measurements of metal/HfO2/SiO2/n-Si gate stacks
    Rothschild, J. A.
    Avraham, H.
    Lipp, E.
    Eizenberg, M.
    APPLIED PHYSICS LETTERS, 2010, 96 (12)
  • [9] Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface
    Lauer, J. L.
    Shohet, J. L.
    Nishi, Y.
    APPLIED PHYSICS LETTERS, 2009, 94 (16)
  • [10] Annealing behavior of atomic layer deposited HfO2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering
    Green, M. L.
    Allen, A. J.
    Jordan-Sweet, J. L.
    Ilavsky, J.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
12