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Novel U-shape resistive random access memory structure for improving resistive switching characteristics
被引:0
|作者:
Inter-University Semiconductor Research Center, School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of
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[2
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来源:
Jpn. J. Appl. Phys.
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4 PART 2卷
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摘要:
RRAM
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