A guide system in Φ 200 mm CZ-Si growth

被引：0

作者：

Ren, Bingyan ^{[1
]}

Chu, Shijun ^{[1
]}

Wu, Xin ^{[1
]}

Yu, Jianxiu ^{[1
]}

Sun, Xiuju ^{[1
]}

机构：

[1] School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 09期

关键词：

Latent heat - Argon - Silicon compounds - Flow fields - Numerical models - Phase interfaces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

By modifying the guide system, with the help of the numerical simulation, the argon flow field and the total thermal field are obtained. We find that using the guide shell and the cooling cover improves the argon flow field, the solid-liquid interface, and the temperature gradient. It is good for the emanatory of crystallization latent heat and the improvement of the radical resistivity in the crystal. It also clarifies the mechanism of the improvement of the temperature gradient and the crystallization latent heat emanation velocity by improving the guide system.

引用

页码：1790 / 1793