Actively Q-switched intracavity Nd:YAG/GdVO4 raman laser

被引:0
作者
Cong, Zhenhua [1 ]
Zhang, Xingyu [1 ]
Wang, Qingpu [1 ]
Li, Shutao [1 ]
Chen, Xiaohan [1 ]
Zhang, Xiaolei [1 ]
机构
[1] School of Information Science and Engineering, Shandong University
来源
Zhongguo Jiguang/Chinese Journal of Lasers | 2009年 / 36卷 / 01期
关键词
Active Q-switching; GdVO[!sub]4[!/sub] crystal; Intracavity Raman laser; Lasers; Stimulated Raman scattering;
D O I
10.3788/CJL20093601.0019
中图分类号
学科分类号
摘要
The characteristics of a laser diode (LD) end-pumped actively Q-switched Nd:YAG/GdVO4 Raman laser are studied. The average output power and pulse width are measured at the different pump power and pulse repetition frequency. At a repetition rate of 20 kHz and an incident pump power of 7.4 W, an average output power of 1.3 W is obtained, and the corresponding optical-to-optical conversion efficiency is 17.4%. The maximum pulse energy of 74.4 μJ is obtained with a repetition rate of 15 kHz and an incident pump power of 6.8 W. Compared with Nd:GdVO4 self-Raman laser, the actively Q-switched Nd:YAG/GdVO4 Raman laser has a higher average output power and a higher conversion efficiency at the same experimental conditions.
引用
收藏
页码:19 / 22
页数:3
相关论文
共 15 条
  • [1] Pask H.M., The design and operation of solid-state Raman lasers, Progress in Quantum Electron., 27, 1, pp. 3-56, (2003)
  • [2] Jia P., Zhang X., Wang Q., Et al., Laser diode-pumped Nd:YVO<sub>4</sub> self-stimulated Raman laser, Chinese J. Lasers, 33, 10, pp. 1309-1313, (2006)
  • [3] Cerny P., Jelinkova H., Zverev P.G., Et al., Solid state lasers with Raman frequency conversion, Progress in Quantum Electron., 28, 2, pp. 113-143, (2004)
  • [4] Liu T., Tan H., Wang B., Et al., Laser diode pumped actively Q-switched Nd:GdVO<sub>4</sub> self-stimulated Raman laser, Chinese J. Lasers, 33, 12, pp. 1593-1596, (2006)
  • [5] Su F., Zhang X., Wang Q., Et al., Passively Q-switched Nd:GdVO<sub>4</sub> self-Raman laser, Acta Optica Sinica, 27, 10, pp. 1831-1835, (2007)
  • [6] Zagumennyi A.I., Ostroumov V.G., Shcherbakov I.A., Et al., The Nd:GdVO<sub>4</sub> crystal: A new material for diode-pumped lasers, Sov. J. Quantum Electron., 22, 12, pp. 1071-1072, (1992)
  • [7] Liu J., Ozygus B., Yang S., Et al., Efficient passive Q-switching operation of a diode-pumped Nd:GdVO<sub>4</sub> laser with a Cr<sup>4+</sup>:YAG saturable absorber, J. Opt. Soc. Am. B, 20, 4, pp. 652-661, (2003)
  • [8] Li C., Song J., Shen D., Et al., Diode-pumped passively Q-switched Nd:GdVO<sub>4</sub> lasers operating at 1.06 μm wavelength, Appl. Phys. B, 70, 4, pp. 471-474, (2000)
  • [9] Liu J., Wang Y., Tian W., Et al., Q-switched and mode-locked diode-pumped Nd:GdVO<sub>4</sub> laser with low temperature GaAs saturable absorber, Opt. Mater., 28, 8, pp. 970-973, (2006)
  • [10] Czeranowsky C., Schmidt M., Heumann E., Et al., Continuous wave diode pumped intracavity doubled Nd:GdVO<sub>4</sub> laser with 840 mW output power at 456 nm, Opt. Commun., 205, 5, pp. 361-365, (2002)