Solid state and nanoelectronic devices - Resistive switching memories

被引：0
|
作者：
Wouters, Dirk
Kund, Michael
机构：
[1] IMEC
[2] Qimonda AG
来源：
Technical Digest - International Electron Devices Meeting, IEDM | 2006年
关键词：
D O I：
10.1109/IEDM.2006.346907
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Solid-state and nanoelectronic devices carbon-based devices
    Massachusetts Institute of Technology
    不详
    Tech. Dig. Int. Electron Meet. IEDM, 2008,
  • [2] A defect-tolerant architecture for nanoelectronic resistive memories
    Strukov, Drnitri B.
    Likharev, Konstantin K.
    7TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, 2006, : 55 - 60
  • [3] Nanowire-based resistive switching memories: devices, operation and scaling
    Ielmini, D.
    Cagli, C.
    Nardi, F.
    Zhang, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (07)
  • [4] SOLID-STATE SWITCHING DEVICES
    不详
    MACHINE DESIGN, 1973, 45 (10) : 130 - &
  • [5] Resistive Switching: A Solid-State Electrochemical Phenomenon
    Naefe, H.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (11) : P423 - P431
  • [6] Switching control of resistive switching devices
    Chen, An
    APPLIED PHYSICS LETTERS, 2010, 97 (26)
  • [7] Electrical Characterization of Resistive Switching Memories
    Chen, An
    Lin, Ming-Ren
    FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011, 2011, 1395
  • [8] Physics of the Switching Kinetics in Resistive Memories
    Menzel, Stephan
    Boettger, Ulrich
    Wimmer, Martin
    Salinga, Martin
    ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (40) : 6306 - 6325
  • [9] INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES
    Wang, Sheng-Yu
    Tseng, Tseung-Yuen
    JOURNAL OF ADVANCED DIELECTRICS, 2011, 1 (02) : 141 - 162
  • [10] Solid-state and nanoelectronic devices-spin devices, batteries and steep slope FETs
    Kreupl, Franz
    Guo, Jing
    Technical Digest - International Electron Devices Meeting, IEDM, 2008,
12345