A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

被引：0

作者：

Yang, Xinran ^{[1
]}

Zhu, He ^{[2
]}

Zhao, Yi ^{[1
]}

Chen, Zubin ^{[1
]}

Sun, Feng ^{[1
]}

Zhu, Xi ^{[3
]}

机构：

[1] Jilin Univ, Coll Instrumentat & Elect Engn, Changchun 130026, Peoples R China

[2] Mfg Commonwealth Sci & Ind Res Org CSIRO, West Lindfield, NSW 2070, Australia

[3] Univ Technol Sydney, Sch Elect & Data Engn, Ultimo, NSW 2007, Australia

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 10期

关键词：

Band-pass filters; Insertion loss; Resonator filters; System-on-chip; Integrated circuit modeling; Silicon germanium; Scattering parameters; Bandpass filter (BPF); broadside-coupled; passive-integrated circuit; microwave; millimeter-wave; notch filter; on-chip filter; SOI CMOS; RESONATOR;

D O I：

10.1109/LED.2024.3435697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a design methodology is presented to generate an upper-stopband transmission zero (TZ) for a bandpass filter (BPF) for improving the selectivity and the stopband suppression performance. Using this method, the TZ can be generated in a very flexible way. As proof of concept, a 30-GHz 2(nd) order bandpass filter (BPF) is fabricated in 45-nm SOI CMOS technology. The measured insertion loss is less than 1.6 dB, and the upper-stopband suppression is greater than 45 dB. Besides, the footprint, excluding the pads, is only 0.046 mm(2).

引用

页码：1710 / 1713

页数：4