Comprehensive study of the X-ray photoelectron spectroscopy peak shift of La-incorporated Hf oxide for gate dielectrics

被引：0

作者：

Yamamoto, Takashi ^{[1
,2
]}

Ogawa, Shingo ^{[1
]}

Tsuji, Jun-Ichi ^{[1
]}

Kita, Koji ^{[3
]}

Tagami, Katsunori ^{[4
]}

Uda, Tsuyoshi ^{[4
]}

Hosoi, Takuji ^{[2
]}

Shimura, Takayoshi ^{[2
]}

Watanabe, Heiji ^{[2
]}

机构：

[1] Toray Research Center Inc., Otsu 520-8567, Japan

[2] Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

[3] Department of Material Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

[4] AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan

来源：

关键词：

D O I：

048005

中图分类号：

学科分类号：

摘要：

Lanthanum compounds - Photons - Photoelectrons - Calculations - Gate dielectrics - Hafnium oxides - Charge transfer

引用