Silicon oxide etching mechanism by hydrogen fluoride and methanol vapor mixture

被引：0
|
作者：
Ohtake, Hiroto [1 ]
Hattori, Takashi [1 ,2 ]
Yamada, Masaki [2 ]
机构：
[1] Hitachi High-Tech Corporation, Tokyo, Japan
[2] Hitachi Ltd., Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | / 64卷 / 01期
关键词：
D O I：
01SP15
中图分类号：
学科分类号：
摘要：
Silica
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